New Random Access Memory Device to Increase Memory Storage Capacity
Indian research team from Indian Institute of Technology Hyderabad have developed resistive random access memory (RRAM) device, which can provide high storage capacity using controlled magnetic fields.
Conventional memory storage devices are developed from silicon, which are used in gadgets that require storage. They have limited scale-up ability for increasing storage capacity. Researchers at Indian Institute of Technology Hyderabad have designed a memory device from silver, titanium dioxide, and fluorine doped Tin oxide (FTO). Also, the team demonstrated the control of resistive switching characteristics of titanium dioxide- based resistive random access memory device with magnetic field. The study was published in journal Scientific Reports in February 2018.
Most of the technological devices such as Non-volatile memory devices such as hard drives and memory cards have flash memory and magnetic random access memory (MRAM) as key components. Furthermore, non-volatile memory stores information even after switching off device. “As present memory technologies are approaching their scaling limits, we need intensive research to develop non-volatile memory technologies. Among various NVM technologies, resistive random access memory (RRAM) also has attracted a great deal of scientific and technological interest owing to its easy fabrication, high density, and promising performance,” said Dr S. N. Jammalamadaka, researcher involved in study.
According to the study, voltage controls the data transport RRAM-based device. The new device would support switching parameters in magnetic field, light, and temperature. Researchers are working on exploring magnetic fields to control transport in a remote way. The device was developed using titanium dioxide paste to prepare a thin film on FTO substrate, followed by heating at 400 degree C. This finding of the study may have potential applications in RRAM-based storage devices, which could be operated with magnetic fields.
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