Researchers Discover New Material for High-Speed Electronics
Researchers discovered a new material from the rare element tellurium for high-speed electronics, according to a study conducted on May 24, 2018.
This study was conducted by the researchers at the Purdue University. This new material was developed to make transistors that carry a current better throughout a computer chip. This discovery also adds to the list of materials that have been earlier developed to improve the speed of transistors. Other two-dimensional materials such as graphene, black phosphorus, and silicone, have lacked either stability at room temperature or the feasible production approaches required to nanomanufacture effective transistors for higher speed devices.
The requirement of all transistors is to carry large amount of current. Transistors that are made of one-dimensional wires have very small cross sections, however, a two-dimensional material can send current over wide surface area. The two-dimensional film developed from tellurium is called as tellurene. It achieves a stable, sheet-like transistor structure with faster-moving carriers. Less amount of tellurium only has to be synthesized through a solution method. This can be easily done by scaling up the size of the container that holds the solution to achieve high productivity.
Since electronics are typically in use at room temperature, naturally stable tellurene transistors at this temperature are more practical and cost-effective than other two-dimensional materials that have required a vacuum chamber or low operation temperature to achieve similar stability and performance. Professor Peide Ye said, “High carrier mobility at room temperature means more practical applications. Faster-moving electrons and holes then lead to higher currents across a chip.”
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